期刊
PHYSICAL REVIEW LETTERS
卷 102, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.125503
关键词
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资金
- DARPA through the IMPACT Center [HR0011-06-1-0046]
- DOE [DE-FG02-97ER25308]
- Nanoelectronics Research Initiative (NRI) SWAN center
We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a description of the surface through the root-mean-square roughness height Delta and autocovariance length L. Using a full phonon dispersion relation, we find a quadratic dependence of thermal conductivity on diameter and roughness as (D/Delta)(2). Computed results show excellent agreement with experimental data for a wide diameter and temperature range (25-350 K), and successfully predict the extraordinarily low thermal conductivity of 2 W m(-1) K-1 at room temperature in rough-etched 50 nm silicon nanowires.
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