4.8 Article

Impact of Phonon-Surface Roughness Scattering on Thermal Conductivity of Thin Si Nanowires

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PHYSICAL REVIEW LETTERS
卷 102, 期 12, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.125503

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资金

  1. DARPA through the IMPACT Center [HR0011-06-1-0046]
  2. DOE [DE-FG02-97ER25308]
  3. Nanoelectronics Research Initiative (NRI) SWAN center

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We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a description of the surface through the root-mean-square roughness height Delta and autocovariance length L. Using a full phonon dispersion relation, we find a quadratic dependence of thermal conductivity on diameter and roughness as (D/Delta)(2). Computed results show excellent agreement with experimental data for a wide diameter and temperature range (25-350 K), and successfully predict the extraordinarily low thermal conductivity of 2 W m(-1) K-1 at room temperature in rough-etched 50 nm silicon nanowires.

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