期刊
PHYSICAL REVIEW LETTERS
卷 102, 期 8, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.087403
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资金
- Ministry of Education, Science, Technology, Sports, and Culture of Japan
The dynamical relaxations of photogenerated hot carriers in the X valley of Si have been studied using time-resolved two-photon photoemission spectroscopy. Intravalley scattering is completed within 100 fs to form a quasiequilibrated electron distribution near the conduction-band minimum, while maintaining about half the excess energy given to hot electrons. The energy relaxation follows the scattering with a 240-fs time constant that is independent of the excess energy.
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