Control of the Anomalous Hall Effect by Doping in Eu1-xLaxTiO3 Thin Films

The anomalous Hall effect (AHE) has been studied for epitaxial films of Eu1-xLaxTiO3, in which band filling can be controlled by doping x without undesired changes in magnetization. This system has a simple band structure near the conduction band bottom, which makes it possible to design the AHE. As expected, the anomalous Hall resistivity shows a nonmonotonic change as a function of the carrier density accompanied with the sign reversal around n = 2.4 x 10(20) cm(-3). This opens a possibility to control the AHE by devising the material, structure, and doping level.