期刊
PHYSICAL REVIEW LETTERS
卷 103, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.103.046803
关键词
-
资金
- Alexander S. Onassis Public Benefit Foundation
- Swiss NSF
- NCCR MaNEP
We demonstrate a giant Rashba-type spin splitting on a semiconducting substrate by means of a Bi-trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken inducing a giant spin splitting with a Rashba energy of about 140 meV, much larger than what has previously been reported for any semiconductor heterostructure. The separation of the electronic states is larger than their lifetime broadening, which has been directly observed with angular resolved photoemission spectroscopy. The experimental results are confirmed by relativistic first-principles calculations.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据