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注意：仅列出部分参考文献，下载原文获取全部文献信息。Advances in SiGeSn technology
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JOURNAL OF MATERIALS RESEARCH (2007)
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Theoretical investigations of Ge nanowires grown along the [110] and [111] directions
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Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100)
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Nature of the band gap of silicon and germanium nanowires
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Optical critical points of thin-film Ge1-ySny alloys:: A comparative Ge1-ySny/Ge1-xSix study
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Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications -: art. no. 011110
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Effect of semicore orbitals on the electronic band gaps of Si, Ge, and GaAs within the GW approximation
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APPLIED PHYSICS LETTERS (2003)
Ge-Sn semiconductors for band-gap and lattice engineering
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