期刊
PHYSICAL REVIEW LETTERS
卷 103, 期 17, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.103.177601
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资金
- NSF [DMR-0705127, DMR-0507146, DMR-0820404]
- U.S. DOE [DE-FG02-01ER45907, DE-AC02-06CH11357]
- DOE EPSCoR [DE-FG02-04ER46142]
- Research Corporation for Science Advancement [7134]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820404] Funding Source: National Science Foundation
We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature T-c in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring T-c in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to T-c tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180 degrees domains below T-c, and thermodynamic phase-field model calculations of T-c as a function of thickness.
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