4.8 Article

Spin States of Holes in Ge/Si Nanowire Quantum Dots

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PHYSICAL REVIEW LETTERS
卷 101, 期 18, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.186802

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  1. Office of Naval Research (ONR
  2. Swiss SNF
  3. Italian MIUR [II04CBCF18, RBIN045MNB]

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We investigate tunable hole quantum dots defined by surface gating Ge/Si core-shell nanowire heterostructures. In single level Coulomb-blockade transport measurements at low temperatures spin doublets are found, which become sequentially filled by holes. Magnetotransport measurements allow us to extract a g factor g(*)approximate to 2 close to the value of a free spin-1/2 particle in the case of the smallest dot. In less confined quantum dots smaller g factor values are observed. This indicates a lifting of the expected strong spin-orbit interaction effects in the valence band for holes confined in small enough quantum dots. By comparing the excitation spectrum with the addition spectrum we tentatively identify a hole exchange interaction strength chi approximate to 130 mu eV.

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