期刊
PHYSICAL REVIEW LETTERS
卷 100, 期 25, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.100.256404
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Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the light of results of a high-frequency EPR an ENDOR study. It is shown that two types of effective-mass-like, shallow donors with a delocalized wave function exist in unintentionally doped AlN. The experiments demonstrate how the transformation from a shallow donor to a deep (DX) center takes place and how the deep DX center can be reconverted into a shallow donor forming a spin triplet and singlet states.
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