期刊
PHYSICAL REVIEW LETTERS
卷 101, 期 18, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.186801
关键词
-
资金
- NSF
- NREL [DE-AC36-98GO103]
The formation of p-type carriers in InN {0001} films by Mg doping is theoretically investigated by means of the highly precise thin film full-potential linearized augmented plane-wave method. The first-principles calculations simultaneously simulating both p-type and n-type carriers in the bulk and surface layers, respectively, demonstrate that the formation energies of a substitutional Mg atom in the surface region are lower than those in the bulk due to the compensation mechanism. The Mg is, however, stabilized in the bulk layers due to a large diffusion-barrier height, suggesting a possible mechanism for the stabilization of Mg in the bulk and the formation of p-type carriers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据