期刊
PHYSICAL REVIEW LETTERS
卷 101, 期 26, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.266802
关键词
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A Rashba-type spin-orbit splitting is found for quantum well states formed in ultrathin Pb films on Si(111). The resulting momentum splitting is comparable to what is found for semiconductor heterostructures. The splitting shows no coverage dependency and the sign of the spin polarization is reversed compared to Rashba splitting in the Au(111) surface state. We explain our results by competing effects at the two boundaries of the Pb layer.
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