期刊
PHYSICAL REVIEW LETTERS
卷 101, 期 15, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.156801
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资金
- National Science Foundation [EEC-0425914, CMMI-0825531]
- DARPA N/MEMS Science and Technology Fundamentals Center on Interfacial Engineering for MEMS
- Directorate For Engineering [0825531] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn [0825531] Funding Source: National Science Foundation
The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC (0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered light results in a significant increase in the C-C bond signal over the second order SiC Raman signal, which allows us to resolve submonolayer growth, including individual, localized C=C dimers in a diamondlike carbon matrix for AES C/Si ratio of similar to 3, and a strained graphene layer with delocalized electrons and Dirac single-band dispersion for AES C/Si ratio > 6. The linear strain, measured at room temperature, is found to be compressive, which can be attributed to the large difference between the coefficients of thermal expansion of graphene and SiC. The magnitude of the compressive strain can be varied by adjusting the growth time at fixed annealing temperature.
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