Direct measurement of the binding energy and bohr radius of a single hydrogenic defect in a semiconductor quantum well

Low-temperature scanning tunneling spectroscopy under ultrahigh vacuum was used to study donor point defects located at the epitaxial surface of an In0.53Ga0.47As quantum well. The electronic local density of states was measured with nanoscale resolution in the vicinity of single defects. In this way, both the binding energy and the Bohr radius of the defects could be determined. The binding energy and the Bohr radius were found to be functions of the quantum well thickness, in quantitative agreement with variational calculations of hydrogenic impurity states.