期刊
PHYSICAL REVIEW LETTERS
卷 100, 期 15, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.100.156801
关键词
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We report measurements of current noise in single-layer and multilayer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/- 10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multilayer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theories for shot noise in ballistic and disordered graphene.
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