4.8 Article

Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor

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PHYSICAL REVIEW LETTERS
卷 100, 期 5, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.100.056810

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The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO(2) planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO(2) planes.

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