期刊
PHYSICAL REVIEW LETTERS
卷 101, 期 26, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.266101
关键词
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资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-AC04-94AL85000]
- Center for Integrated Nanotechnologies
- NSF [DMR-0705145]
Using scanning tunneling microscopy, we determine that the one-dimensional diffusion of Si adatoms along the Si(111)-(5x2)-Au surface reconstruction occurs by a defect-mediated mechanism. Distinctive diffusion statistics, especially correlations between sequential adatom displacements, imply that the displacements are triggered by an interaction with a defect that is localized to the adatom. The defect is intrinsic and thermally activated. The measured diffusion statistics are modeled accurately by a Monte Carlo simulation. The measured adatom diffusion activation barrier is 1.24 +/- 0.08 eV.
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