4.7 Article

Dressed counterions: Polyvalent and monovalent ions at charged dielectric interfaces

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PHYSICAL REVIEW E
卷 84, 期 1, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevE.84.011502

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  1. Agency for Research and Development of Slovenia [P1-0055(C)]
  2. Alexander von Humboldt Foundation
  3. Royal Society
  4. Royal Academy of Engineering
  5. British Academy
  6. Swedish Research Council
  7. Aspen Center for Physics

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We investigate the ion distribution and overcharging at charged interfaces with dielectric inhomogeneities in the presence of asymmetric electrolytes containing polyvalent and monovalent ions. We formulate an effective dressed counterion approach by integrating out the monovalent salt degrees of freedom and show that it agrees with results of explicit Monte Carlo simulations. We then apply the dressed counterion approach within the framework of the generalized strong-coupling theory, valid for polyvalent ions at low concentrations, which enables an analytical description for salt effects as well as dielectric inhomogeneities in the limit of strong Coulomb interactions. Limitations and applicability of this theory are examined by comparing the results with simulations.

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