4.6 Article

Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation

期刊

PHYSICAL REVIEW B
卷 89, 期 10, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.104421

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资金

  1. Defense Advanced Research Projects Agency (DARPA)
  2. National Science Foundation (NSF) Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS)
  3. Function Accelerated nanoMaterial Engineering (FAME) Center, of the Semiconductor Technology Advanced Research network (STARnet), Semiconductor Research Corporation (SRC)
  4. Microelectronics Advanced Research Corporation (MARCO)

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The influence of spin-Hall-effect spin torque (SHE-ST) induced by in-plane charge current was studied in microscale Ta/Co20Fe60B20/TaOx films with perpendicular magnetization. Simultaneous electrical transport and polar magneto-optical Kerr effect (MOKE) imaging experiments were used to investigate the switching dynamics. A rich set of switching behaviors was observed, which can be well understood by analyzing a switching-phase diagram and polar MOKE images, considering the competition between SHE-ST and the externally applied magnetic field. Furthermore, we found that domain walls with a particular chirality were dominant in our devices, which suggests the presence of the Dzyaloshinskii-Moriya interaction in the present material system.

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