期刊
PHYSICAL REVIEW B
卷 89, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.121413
关键词
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资金
- LPS-CMTC
- Microsoft Q
- Basic Science Research Program through the National Research Foundation of Korea
- Ministry of Science, ICT & Future Planning [2009-0083540]
We study theoretically the relative importance of short-range disorder in determining the low-temperature two-dimensional (2D) mobility in GaAs-based structures with respect to Coulomb disorder, which is known to be the dominant disorder in semiconductor systems. We give results for unscreened and screened short-range disorder effects on 2D mobility in quantum wells and heterostructures, comparing with the results for Coulomb disorder and finding that the asymptotic high-density mobility is always limited by short-range disorder which, in general, becomes effectively stronger with increasing carrier density, in contrast to Coulomb disorder. We also predict an intriguing reentrant metal-insulator transition at very high carrier densities in Si metal-oxide-semiconductor field-effect transistors driven by the short-range disorder associated with surface-roughness scattering.
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