期刊
PHYSICAL REVIEW B
卷 89, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.125422
关键词
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资金
- US Army Research Office, MURI [W911NF-11-1-0362]
- Welch Foundation [C-1716]
- NSF-ECCS [1327093]
- NSF ECCS [1351424]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1351424, 1327093] Funding Source: National Science Foundation
Here, we report on the ac conductivity [sigma'(omega); 10 mHz < omega < 0.1 MHz] measurements performed on atomically thin, two-dimensional layers of MoS2 grown by chemical vapor deposition (CVD). sigma'(omega) is observed to display a universal power law, i.e., sigma'(omega) similar to omega(s) measured within a broad range of temperatures, 10 K < T < 340 K. The temperature dependence of s indicates that the dominant ac transport conduction mechanism in CVD-grown MoS2 is due to electron hopping through a quantum mechanical tunneling process. The ac conductivity also displays scaling behavior, which leads to the collapse of the ac conductivity curves obtained at various temperatures into a single master curve. These findings establish a basis for our understanding of the transport mechanism in atomically thin, CVD-grown MoS2 layers.
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