期刊
PHYSICAL REVIEW B
卷 90, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.195105
关键词
-
资金
- Ministry of Science and Technology of China [2011CB606405, 2011CB921901]
- National Natural Science Foundation of China [11334006]
- Tsinghua exchange student fund
Realizing topological insulators in commonly used III-V semiconductors is of great importance for their potential application in spintronics and quantum computing. Here we propose a general strategy to realize topological insulators in conventional III-V semiconductors by bismuth substitution and external strain. Based on first-principles calculations, we identify that AlBi (GaBi and InBi) become topological insulators (semimetals) under proper external strain by directly calculating Z(2) invariants and surface states. Furthermore, we demonstrate that a topological phase transition can be induced by Bi substitution in common III-V semiconductors like GaAs. These proposed topological insulators can be easily integrated into various semiconductor electronic devices and modulated by well-developed modern semiconductor technologies.
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