期刊
PHYSICAL REVIEW B
卷 90, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.115209
关键词
-
资金
- National Research Foundation of Korea (NRF) - Korea government (MEST) [2008-0061987]
- National Research Foundation of Korea (NRF) [NRF-2005-0093845]
- Samsung Science and Technology Foundation [SSTF-BA1401-08]
- National Research Foundation of Korea [2008-0061987, 2005-0093845] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Due to its abundance, silicon is the preferred solar-cell material despite the fact that current silicon materials have indirect band gaps. Although the band gap properties of silicon have been studied intensively, until now, no direct band gap silicon-based material has been found or suggested. We report here the discovery of direct band gap silicon crystals. By using conformational space annealing, we optimize various crystal structures containing multiple (10 to 20) silicon atoms per unit cell so that their electronic structures become direct band gap. Through first-principles calculations, we identify many direct and quasidirect band gap crystal structures, which exhibit excellent photovoltaic efficiency.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据