Spin-valley relaxation and quantum transport regimes in two-dimensional transition-metal dichalcogenides

Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transitionmetal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin-diffusion length, and we develop a theory of weak localization/antilocalization, describing the crossovers between the orthogonal, double-unitary, and symplectic regimes of quantum transport in TMDCs.