期刊
PHYSICAL REVIEW B
卷 89, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.205108
关键词
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资金
- Global COE Program (Core Research and Engineering of Advanced Materials-Interdisciplinary Education Center for Materials Science), MEXT, Japan
- Grants-in-Aid for Scientific Research [26400393] Funding Source: KAKEN
We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multifractal analysis of the Kohn-Sham eigenfunctions, we find nu approximate to 1.3 for the critical exponent of the correlation length. This differs from that of Anderson's model of localization and suggests that the Coulomb interaction changes the universality class of the transition.
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