4.6 Article

Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor

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PHYSICAL REVIEW B
卷 87, 期 19, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.195201

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We investigate the electronic and magnetic properties of Mn-doped monolayer MoS2 using a combination of first-principles density functional theory (DFT) calculations and Monte Carlo simulations. Mn dopants that are substitutionally inserted at Mo sites are shown to couple ferromagnetically via a double-exchange mechanism. This interaction is relatively short ranged, making percolation a key factor in controlling long-range magnetic order. The DFT results are parameterized using an empirical model to facilitate Monte Carlo studies of concentration-and temperature-dependent ordering in these systems, through whichwe obtainCurie temperatures in excess of room temperature for Mn doping in the range of 10-15%. Our studies demonstrate the potential for engineering a newclass of atomically thin dilute magnetic semiconductors based on Mn-doped MoS2 monolayers.

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