期刊
PHYSICAL REVIEW B
卷 87, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.201105
关键词
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资金
- NRF of Korea
- Ministry of Education, Science and Technology [2012-0004082, 2012R1A1A2039944]
- Grants-in-Aid for Scientific Research [23244066, 23340105, 23740275] Funding Source: KAKEN
We report the doping effect of a magnetic Fe ion in Bi2Te3, that is, Bi2-xFexTe3 (x = 0, 0.08, 0.15, 0.2, 0.25, and 0.3). The paramagnetic magnetization data reveal that the Fe ions are doped in the divalent form. The Fe2+ state substituted for Bi3+ can create hole donors, which compensate for the electron dopants of Bi2Te3 with a small amount of Te excess. This causes the n-type carrier density to be decreased with increasing x, and finally be changed to p type at x = 0.3, where the carrier mobility suddenly drops and the electrical resistivity abruptly increases. These results are consistent with angle-resolved photoemission spectroscopy experiments. The Fermi level shifts downward with increasing x. Furthermore, we find a larger spin polarization for the Fe-doped Bi2Te3 samples, which is crucial for future spintronics applications.
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