期刊
PHYSICAL REVIEW B
卷 88, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.88.045114
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资金
- MRSEC Program of the National Science Foundation [DMR 1121053]
- National Science Foundation [DGE-0549417, DMR-1122603]
- Welch Foundation [TBF1473]
- NSF [DMR-0654118]
- State of Florida
The Shubnikov-de Haas effect is used to explore the conduction-band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe et al. [Jpn. J. Appl. Phys. 24 (Suppl. 24-2), 335 (1985)]. The band edge dispersion differs significantly from the predictions of ab initio electronic structure theory.
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