相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
Sarah Goler et al.
CARBON (2013)
Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)
Shinichi Tanabe et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2012)
Atomic-scale transport in epitaxial graphene
Shuai-Hua Ji et al.
NATURE MATERIALS (2012)
Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
J. Ristein et al.
PHYSICAL REVIEW LETTERS (2012)
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck et al.
APPLIED PHYSICS LETTERS (2011)
Carrier transport mechanism in graphene on SiC(0001)
Shinichi Tanabe et al.
PHYSICAL REVIEW B (2011)
Charge trapping and scattering in epitaxial graphene
Damon B. Farmer et al.
PHYSICAL REVIEW B (2011)
Electronic transport in two-dimensional graphene
S. Das Sarma et al.
REVIEWS OF MODERN PHYSICS (2011)
Charge transfer between epitaxial graphene and silicon carbide
Sergey Kopylov et al.
APPLIED PHYSICS LETTERS (2010)
Roll-to-roll production of 30-inch graphene films for transparent electrodes
Sukang Bae et al.
NATURE NANOTECHNOLOGY (2010)
Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001)
J. Cervenka et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2010)
Growth dynamics and kinetics of monolayer and multilayer graphene on a 6H-SiC(0001) substrate
Siew Wai Poon et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2010)
Giant inelastic tunneling in epitaxial graphene mediated by localized states
J. Cervenka et al.
PHYSICAL REVIEW B (2010)
Inelastic scattering and current saturation in graphene
Vasili Perebeinos et al.
PHYSICAL REVIEW B (2010)
Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
K. Zou et al.
PHYSICAL REVIEW LETTERS (2010)
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Konstantin V. Emtsev et al.
NATURE MATERIALS (2009)
Graphene formation mechanisms on 4H-SiC(0001)
Michael L. Bolen et al.
PHYSICAL REVIEW B (2009)
Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Gruneisen parameters, and sample orientation
T. M. G. Mohiuddin et al.
PHYSICAL REVIEW B (2009)
Raman spectra of epitaxial graphene on SiC(0001)
J. Roehrl et al.
APPLIED PHYSICS LETTERS (2008)
Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2
Dong Su Lee et al.
NANO LETTERS (2008)
Intrinsic and extrinsic performance limits of graphene devices on SiO2
Jian-Hao Chen et al.
NATURE NANOTECHNOLOGY (2008)
Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
H. Hibino et al.
PHYSICAL REVIEW B (2008)
Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001)
Nicola Ferralis et al.
PHYSICAL REVIEW LETTERS (2008)
Raman spectrum of graphene and graphene layers
A. C. Ferrari et al.
PHYSICAL REVIEW LETTERS (2006)
Phonon and plasmon excitation in inelastic electron tunneling spectroscopy of graphite
L Vitali et al.
PHYSICAL REVIEW B (2004)