期刊
PHYSICAL REVIEW B
卷 87, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.125305
关键词
-
资金
- Polish Ministry of Science and Higher Education/the National Science Center [N N202 181238, 2011/01/B/ST3/02379, N N515 496640]
- COPERNICUS Award of the Fundation for Polish Science
- Deutsche Forschungsgemeinschaft
Carrier relaxation processes have been studied in low indium content self-assembled (In,Ga)As/GaAs quantum dots (QDs). Temperature-dependent photoluminescence of the wetting layer (WL) and QDs, and QD photoluminescence rise time elongation from similar to 100 to similar to 200 ps in the range of 10-45 K, indicated a complex carrier relaxation scheme. It involves localization of carriers/excitons in the WL, their temperature-mediated release, and subsequent transfer between the states of the WL and QD ensemble. These observations are explained by a thermal hopping model, in which electron-hole pairs are redistributed within two separate sets of zero-dimensional states of considerably different densities connected by a two-dimensional mobility channel. DOI: 10.1103/PhysRevB.87.125305
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据