期刊
PHYSICAL REVIEW B
卷 88, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.88.201301
关键词
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资金
- EPSRC of the UK [EP/I017860/1]
- JST-ERATO program
- European Commission [228043-EuroMagNET, GSC09-210]
- Engineering and Physical Sciences Research Council [EP/I017860/1] Funding Source: researchfish
- EPSRC [EP/I017860/1] Funding Source: UKRI
We demonstrate that spin polarization and valley polarization have quantitatively similar effects on the resistivity of a two-dimensional electron gas in a silicon-on-insulator quantum well. In so doing, we also examine the dependence on disorder, leading to a coarse but global phenomenology of how the resistivity depends on its key parameters: spin and valley polarization, density, disorder, and temperature.
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