期刊
PHYSICAL REVIEW B
卷 86, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.035436
关键词
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资金
- New Energy and Industrial Technology Development Organization of Japan
We report on the local atomic and electronic structures of a nitrogen-doped graphite surface by scanning tunneling microscopy, scanning tunneling spectroscopy, x-ray photoelectron spectroscopy, and first-principles calculations. The nitrogen-doped graphite was prepared by nitrogen ion bombardment followed by thermal annealing. Two types of nitrogen species were identified at the atomic level: pyridinic-N (N bonded to two C nearest neighbors) and graphitic-N (N bonded to three C nearest neighbors). Distinct electronic states of localized pi states were found to appear in the occupied and unoccupied regions near the Fermi level at the carbon atoms around pyridinic-N and graphitic-N species, respectively. The origin of these states is discussed based on experimental results and theoretical simulations.
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