期刊
PHYSICAL REVIEW B
卷 85, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.073405
关键词
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资金
- Center on Functional Engineered Nano Architectonics (FENA)
- W. M. Keck Foundation
- Stanford Center for Probing the Nanoscale (CPN)
- Division Of Physics
- Direct For Mathematical & Physical Scien [830228] Funding Source: National Science Foundation
- Grants-in-Aid for Scientific Research [23310096] Funding Source: KAKEN
We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract properties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measured properties of two devices are used to shed light on mutually contrasting previous results of scanning tunneling microscopy in graphene.
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