4.6 Article

Long-distance spin transport in high-mobility graphene on hexagonal boron nitride

期刊

PHYSICAL REVIEW B
卷 86, 期 16, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.161416

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  1. Dutch Foundation for Fundamental Research on Matter (FOM)
  2. NWO
  3. NanoNed
  4. Zernike Institute for Advanced Materials

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We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm(2) V-1 s(-1). We could observe spin transport over lengths up to 20 mu m at room temperature, the largest distance measured so far for graphene. Due to enhanced charge-carrier diffusion, spin relaxation lengths are measured up to 4.5 mu m. The relaxation times are similar to values for lower quality SiO2-based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.

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