期刊
PHYSICAL REVIEW B
卷 86, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.121409
关键词
-
资金
- Texas Instrument
- Semiconductor Research Corporation (SRC)
- Microelectronics Advanced Research Corporation (MARCO)
- Focus Center Research Project (FCRP) for Materials, Structures and Devices (MSD)
- Samsung Electronics Ltd.
We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of these nanostructures, provides insights into the effect of the top gate on impurity scattering, and predicts that the carrier mobility in such graphene heterostructures decreases with increasing top dielectric thickness and higher carrier density. An increase of up to almost 60% in carrier mobility in ultrathin top-gated graphene is predicted.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据