期刊
PHYSICAL REVIEW B
卷 86, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.165108
关键词
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资金
- Laboratory Directed Research and Development Program of ORNL
- Research Grant Council of Hong Kong [HKU706412P]
- MOST Project of China [2011CBA00100]
- NSF of China [10974231, 11174337]
- US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division
first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley-Hall and a spin-Hall effect. We also show that the intrinsic spin Hall conductivity in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.
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