期刊
PHYSICAL REVIEW B
卷 86, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.045319
关键词
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资金
- Japan Society for the Promotion of Science (JSAP)
- Grants-in-Aid for Scientific Research [21224009] Funding Source: KAKEN
Topological insulators are quantum materials comprised of an insulating bulk gap and topologically protected metallic surfaces with a Dirac-like band dispersion. To access the Dirac point by transport measurements is a very challenging issue faced in current investigations of these materials. Here we report the electronic state modulation in topological insulator (Bi1-x Sb-x)(2)Te-3 thin films by means of an ionic-liquid gating. The films with 20 nm thickness were grown on lattice-matched semi-insulating InP substrates by molecular beam epitaxy; the temperature dependencies of resistance of these films clearly indicate their insulating bulk and metallic surface characteristics. The surface state carriers were systematically controlled by using electric-double-layer transistor (EDLT) configurations with ionic-liquid dielectrics. It was demonstrated that the surface state in the (Bi1-x Sb-x)(2)Te-3-based EDLTs is tuned across the Dirac point, showing ambipolar transport in a topological transport regime.
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