期刊
PHYSICAL REVIEW B
卷 85, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.195125
关键词
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资金
- NSFC [11047131, 10821403, 10974236]
- RFDPHE-China [20101303120005]
- China Post-doctoral Science Foundation [20100480147, 201104030]
- MOST of China [2012CB921300]
- China-973 program
This paper details an investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to a topological Anderson insulator induced by normal Anderson disorder, a different physical picture arises when bond disorder is considered. Using Born approximation theory, an explanation is given as to why bond disorder plays a different role in the phase transition than Anderson disorder. By comparing phase diagrams, conductance, conductance fluctuations, and the localization length for systems with different types of disorder, a consistent conclusion is obtained. The results indicate that a topological Anderson insulator is dependent on the type of disorder. These results are important for the doping processes used in the preparation of topological insulators.
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