期刊
PHYSICAL REVIEW B
卷 85, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.205308
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资金
- DARPA [FA8650-08-C-7835]
- NSF Center for Energy Efficient Electronics Science under NSF [ECCS-0939514]
- NDSEG Department of Defense
- NSF [DMR-0907600]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0907600] Funding Source: National Science Foundation
Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/strained-Ge heterostructure was found to be 770, 760, and 670 meV for 35, 42, and 52% Ge in the relaxed SiGe substrate, respectively. These values are approximately 100 meV larger than the usually recommended band offsets for modeling Si/Ge structures. It is shown that the larger valence-band offsets found here are consistent with an 800-meV average valence-band offset between Si and Ge, which also explains the type-II band alignment observed in strained-Si1-xGex on unstrained-Si heterostructures.
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