期刊
PHYSICAL REVIEW B
卷 86, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.035315
关键词
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资金
- National Science Foundation
- MRSEC Program [0968346]
- KAUST [N012509-00]
- Directorate For Engineering [0968346] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [0968346] Funding Source: National Science Foundation
Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D'yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.
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