期刊
PHYSICAL REVIEW B
卷 85, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.201410
关键词
-
资金
- Ministry of Science and Technology of China [2011CB606405, 2011CB921901, 2009CB929401]
- NSF of China [10974110, 11074139]
- DOE-BES [DE-FG02-04ER46027]
When the dimension of a solid structure is reduced, there will be two emerging effects, quantum confinement and surface effect, which dominate at nanoscale. Based on first-principles calculations, we demonstrate that due to an intriguing interplay between these two dominating effects, the topological and electronic (topoelectronic) properties of Sb (111) nanofilms undergo a series of transitions as a function of the reducing film thickness: transforming from a topological semimetal to a topological insulator at 7.8 nm (22 bilayer), then to a quantum spin Hall (QSH) phase at 2.7 nm (8 bilayer), and finally, to a normal (topological trivial) semiconductor at 1.0 nm (3 bilayer). Our theoretical findings identify the existence of the QSH in the Sb (111) nanofilms within a narrow range of thickness and suggest that the Sb (111) nanofilms provide an ideal test bed for experimental study of topoelectronic phase transitions.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据