Multiferroic tunnel junctions with poly(vinylidene fluoride)

We perform first-principles calculations based on density functional theory of the spin-resolved conductance of poly(vinylidene fluoride)- (PVDF) based multiferroic tunnel junctions (MFTJs). We consider Co/PVDF/O/Co (0001) MFTJs with one oxidized interface, representing the different experimental growth conditions for the two interfaces. We demonstrate that this natural asymmetry leads to multiple resistance states associated with different magnetization configurations of the electrodes and ferroelectric polarization orientations of the barrier. Our results indicate very high tunability of the tunneling magnetoresistance and electroresistance effects, which could be useful for logic and memory applications.