期刊
PHYSICAL REVIEW B
卷 86, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.125205
关键词
-
资金
- Deutsche Forschungsgemeinschaft [LA 1397/3-1]
Single crystalline silicon implanted with Si-28 ions and subsequently hydrogenated from an rf plasma at 200 degrees C is studied by Raman and photoluminescence spectroscopy. A broad Raman band at 3830 cm(-1) previously assigned to the rovibrational transitions of hydrogen molecules trapped in Si multivacancies [Ishioka et al., Phys. Rev. B 60, 10852 (1999)] reveals a complex line shape at 60 K. In contrast, our study correlates the Raman band to three different localized traps for hydrogen molecules which are identified from the dependence on the ion dose and annealing behavior. Each of these traps, which is saturated with H-2, gives rise to three Raman transitions due to para-and ortho-H-2. The H-2 signals are shown to correlate with the Si-H vibrational modes at 1888, 1930, and 1964 cm(-1). Ortho to para conversion rates of H-2 at 77 K and room temperature were found to be 62 +/- 15 and 8 +/- 2 h, respectively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据