期刊
PHYSICAL REVIEW B
卷 86, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.125321
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资金
- National Science Council in Taiwan [NSC100-2112-M-239-001-MY3, NSC-98-2112-M-009-011-MY2, NSC-100-2112-M-009-013-MY2]
The authors investigate quantum transport in a narrow constriction fabricated by narrow-band-gap semiconductor materials with spin-orbit couplings. We consider the Rashba-Dresselhaus (RD) spin-orbit interactions (SOIs) and the Zeeman effect induced by an in-plane magnetic field along the transport direction. The interplay of the RD SOI and the Zeeman effect may induce a SOI-Zeeman gap and influence the transport properties. We demonstrate that an attractive scattering potential may induce an electronlike quasi-bound-state feature and manifest the RD-SOI-Zeeman induced Fano line shape in conductance. Furthermore, a repulsive scattering potential may induce a holelike quasi-bound-state feature on the subband top of the lower spin branch.
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