期刊
PHYSICAL REVIEW B
卷 86, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.125426
关键词
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资金
- European Science Foundation under the EUROCORES Program CRP Graphic-RF (DFG) [PA 516/8-1]
- Special Priority Program Graphene (DFG) [PA 516/9-1]
- Collaborative Research Center [SFB 953]
We describe a mechanism in which low-energy phonons of the SiC/graphene interface modify the separation between the buffer layer and the graphene overlayer, resulting in a deformation potential and hence charge carrier scattering. We determine this deformation potential ab initio, and then calculate transport properties within the Boltzmann formalism. Our results show (i) a remarkable decrease in the resistivity (rho) near the Dirac point with increasing temperature (T), (ii) a linear increase of rho with T away from the Dirac point, and (iii) good agreement with experiment for low temperature to room temperature change in resistivity for epitaxial graphene on the SiC Si face.
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