期刊
PHYSICAL REVIEW B
卷 85, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.205309
关键词
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资金
- NSF IGERT [DGE-0549503]
- National Science Foundation [DGE-0742540]
- ARO [W911NF0720083]
- Energimyndigheten [32920D1]
- MICINN [FIS2011-23526]
- nmC@LU
- Foundation for Strategic Research (SSF)
- Air Force Office of Scientific Research, Air Force Material Command, USAS [FA8655-11-1-3037]
The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasiballistic junction with a central scattering site. We find a novel transverse thermovoltage measured across isothermal contacts. Using a multiterminal scattering model extended to the weakly nonlinear voltage regime, we show that the device's response to a thermal bias can be predicted from its nonlinear response to an electric bias. Our approach forms a foundation for the discovery and understanding of advanced, nonlocal, thermoelectric phenomena that in the future may lead to novel thermoelectric device concepts.
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