Interplay between electron-phonon coupling and disorder strength on the transport properties of organic semiconductors

The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high-T contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely increase the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window 150 K < T < 300 K. The results are discussed in connection with experimental data of rubrene organic field-effect transistors.