4.6 Article

Optical third harmonic generation in the magnetic semiconductor EuSe

期刊

PHYSICAL REVIEW B
卷 85, 期 3, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.035206

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资金

  1. Deutsche Forschungsgemeinschaft [YA65/4-1]
  2. Russian Foundation for Basic Research [10-02-01008]
  3. Russian Academy
  4. FoNE of the European Science Foundation
  5. FAPESP
  6. CNPq
  7. Deutscher Akademischer Austauschdienst (DAAD)
  8. FWF, Vienna, Austria [I80-N20]
  9. Austrian Science Fund (FWF) [F 2504] Funding Source: researchfish

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Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at 2.1-2.6 eV and at higher energies up to 3.7 eV. EuSe is amagnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group m3m. For this symmetry the crystallographic and magnetic-field-induced THG nonlinearities are allowed in the electric-dipole approximation. Using temperature, magnetic field, and rotational anisotropy measurements, the crystallographic and magnetic-field-induced contributions to THG were unambiguously separated. Strong resonant magnetic-field-induced THG signals were measured at energies in the range of 2.1-2.6 eV and 3.1-3.6 eV for which we assign to transitions from 4 f(7) to 4 f(6)5d(1) bands, namely involving 5d(t(2g)) and 5d(e(g)) states.

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