4.6 Article

Multiband effects on β-FeSe single crystals

期刊

PHYSICAL REVIEW B
卷 85, 期 9, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.094515

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资金

  1. U.S. DOE [DE-AC02-98CH10886]
  2. Center for Emergent Superconductivity, an Energy Frontier Research Center
  3. U.S. DOE, Office for Basic Energy Science
  4. DOE NNSA [DEFG52-10NA29659]
  5. NSF [DMR-0654118]
  6. State of Florida

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We present the upper critical fields mu H-0(c2)(T) and Hall effect in beta-FeSe single crystals. The mu H-0(c2)(T) increases as the temperature is lowered for fields applied parallel and perpendicular to (101), the natural growth facet of the crystal. The mu(0)Hc(2)(T) for both field directions and the anisotropy at lowtemperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate mu H-0(c2)(T) and electronic transport in the normal state.

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