期刊
PHYSICAL REVIEW B
卷 85, 期 18, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.180512
关键词
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资金
- NSF [DMR06-05813, DMR-0906521]
- University of Cincinnati
- ARO [W911NF-07-1-0464]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0906521] Funding Source: National Science Foundation
We study the transport properties of nanoscale superconducting (S) devices in which two superconducting electrodes are bridged by two parallel ferromagnetic (F) wires, forming an SFFS junction with a separation between the two wires less than the superconducting coherence length. This allows crossed Andreev reflection to take place. We find that the resistance as a function of temperature exhibits behavior reminiscent of the reentrant effect and, at low temperatures and excitation energies below the superconducting gap, the resistance corresponding to antiparallel alignment of the magnetization of the ferromagnetic wires is higher than that of parallel alignment, in contrast to the behavior expected from crossed Andreev reflection. We present a model based on spin-dependent interface scattering that explains this surprising result and demonstrates the sensitivity of the junction transport properties to interfacial parameters.
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