相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)
Muhammad Usman et al.
JOURNAL OF APPLIED PHYSICS (2011)
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations
Muhammad Usman et al.
NANOTECHNOLOGY (2011)
Compositional dependence of the exciton reduced mass in GaAs1-xBix (x=0-10%)
G. Pettinari et al.
PHYSICAL REVIEW B (2010)
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
Hui-Xiong Deng et al.
PHYSICAL REVIEW B (2010)
Valley degeneracies in (111) silicon quantum wells
Neerav Kharche et al.
APPLIED PHYSICS LETTERS (2009)
Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data
Muhammad Usman et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2009)
Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications
V. Pacebutas et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2009)
Trends in the electronic structure of dilute nitride alloys
E. P. O'Reilly et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1-xBix
G. Pettinari et al.
APPLIED PHYSICS LETTERS (2008)
Evolution of N defect states and optical transitions in ordered and disordered GaP1-xNx alloys
C. Harris et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2008)
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
G. P. Lansbergen et al.
NATURE PHYSICS (2008)
Spatial correlation between Bi atoms in dilute GaAs1-xBix:: From random distribution to Bi pairing and clustering
G. Ciatto et al.
PHYSICAL REVIEW B (2008)
Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks
Gerhard Klimeck et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part II: Applications
Gerhard Klimeck et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Valence band anticrossing in GaBixAs1-x
K. Alberi et al.
APPLIED PHYSICS LETTERS (2007)
Valence-band anticrossing in mismatched III-V semiconductor alloys
K. Alberi et al.
PHYSICAL REVIEW B (2007)
Giant spin-orbit bowing in GaAs1-xBix
B. Fluegel et al.
PHYSICAL REVIEW LETTERS (2006)
Alloy scattering of n-type carriers in GaNxAs1-x
S. Fahy et al.
PHYSICAL REVIEW B (2006)
Structural and electronic properties of III-V bismuth compounds
M Ferhat et al.
PHYSICAL REVIEW B (2006)
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx
F Masia et al.
PHYSICAL REVIEW B (2006)
Similar and dissimilar aspects of III-V semiconductors containing Bi versus N
Y Zhang et al.
PHYSICAL REVIEW B (2005)
Band gaps of the dilute quaternary alloys GaNxAs1-x-yBiy and Ga1-yInyNxAs1-x -: art. no. 112113
S Tixier et al.
APPLIED PHYSICS LETTERS (2005)
A tight-binding-based analysis of the band anti-crossing model in GaNxAs1-x
A Lindsay et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2004)
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
A Lindsay et al.
PHYSICAL REVIEW LETTERS (2004)
Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures
OL Lazarenkova et al.
APPLIED PHYSICS LETTERS (2004)
Band gap of GaAs1-xBix, 0<x<3.6%
S Francoeur et al.
APPLIED PHYSICS LETTERS (2003)
Derivation of a 10-band k • p model for dilute nitride semiconductors
A Lindsay et al.
SOLID-STATE ELECTRONICS (2003)
Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy
J Yoshida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
Tight-binding and k•p models for the electronic structure of Ga(In)NAs and related alloys
EP O'Reilly et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2002)
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
A Janotti et al.
PHYSICAL REVIEW B (2002)
Theory of electronic structure evolution in GaAsN and GaPN alloys
PRC Kent et al.
PHYSICAL REVIEW B (2001)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)
Influence of nitrogen resonant states on the electronic structure of GaNxAs1-x
A Lindsay et al.
SOLID STATE COMMUNICATIONS (2001)
From N isoelectronic impurities to N-induced bands in the GaNxAs1-x alloy
PJ Klar et al.
APPLIED PHYSICS LETTERS (2000)