期刊
PHYSICAL REVIEW B
卷 84, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.121302
关键词
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资金
- FAPESP (Brazilian agency)
- CNPq (Brazilian agency)
- USP-COFECUB [Uc Ph 109/08]
- FAPESP-CNRS
- RFBI [09-02-00467a, 11-02-12142-ofi-m]
- RAS
The transport properties of the inverted semiconductor HgTe-based quantum well, recently shown to be a two-dimensional topological insulator, are studied experimentally in the diffusive regime. Nonlocal transport measurements are performed in the absence of magnetic field, and a large signal due to the edge states is observed. This shows that the edge states can propagate over a long distance, similar to 1 mm, and therefore, there is no difference between local and nonlocal electrical measurements in a topological insulator. In the presence of an in-plane magnetic field a strong decrease of the local resistance and complete suppression of the nonlocal resistance is observed. We attribute this behavior to an in-plane magnetic-field-induced transition from the topological insulator state to a conventional bulk metal state.
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